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to our customers, old company name in catalogs and other documents on april 1 st , 2010, nec electronics corporation merged with renesas technology corporation, and renesas electronics corporation took over all the business of both companies. therefore, although the old company name remains in this document, it is a valid renesas electronics document. we appreciate your understanding. renesas electronics website: http://www.renesas.com april 1 st , 2010 renesas electronics corporation issued by: renesas electronics corporation ( http://www.renesas.com ) send any inquiries to http://www.renesas.com/inquiry .
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rev.1.00, may.13.2 003, page 1 of 10 haf1009(l), haf1009(s) silicon p channel mos fet series power switching rej03g0029-0100z (previous ade-208-1525 (z)) rev.1.00 may.13.2003 description this fet has the over temperature shut?down capability sensing to the junction temperature. this fet has the built?in over temperatur e shut?down circuit in the gate area. and this circuit operation to shut?down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. features ? logic level operation (-4 to -6 v gate drive) ? high endurance capability against to the short circuit ? built?in the over temperature shut?down circuit ? latch type shut?down operation (need 0 voltage recovery) outline gate resistor tempe? rature sencing circuit latch circuit gate shut? down circuit d s g ldpak 1. gate 2. drain 3. source 4. drain 1 2, 4 3 1 2 3 1 2 4 4 3
haf1009(l), haf1009(s) rev.1.00, may.13.2 003, page 2 of 10 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss ?60 v gate to source voltage v gss ?16 v gate to source voltage v gss 2.5 v drain current i d ?40 a drain peak current i d (pulse) note 1 ?80 a body-drain diode reverse drain current i dr ?40 a channel dissipation pch note 2 50 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1 % 2. value at tc = 25c typical operation characteristics (ta = 25c) item symbol min typ max unit test conditions v ih ?3.5 ? ? v input voltage v il ? ? ?1.2 v i ih1 ? ? ?100 a vi = ?8 v, v ds = 0 i ih2 ? ? ?50 a vi = ?3.5 v, v ds = 0 input current (gate non shut down) i il ? ? ?1 a vi = ?1.2 v, v ds = 0 i ih(sd)1 ? ?0.8 ? ma vi = ?8 v, v ds = 0 input current (gate shut down) i ih(sd)2 ? ?0.35 ? ma vi = ?3.5 v, v ds = 0 shut down temperature tsd ? 175 ? c channel temperature gate operation voltage vop ?3.5 ? ?12 v
haf1009(l), haf1009(s) rev.1.00, may.13.2 003, page 3 of 10 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain current i d1 ?10 ? ? a v gs = ?3.5, v ds = ?2 v drain current i d2 ? ? ?10 ma v gs = ?1.2v, v ds = ?2 v drain to source breakdown voltage v (br)dss ?60 ? ? v i d = ?10 ma, v gs = 0 gate to source breakdown voltage v (br)gss ?16 ? ? v i g = ?800 a, v ds = 0 gate to source breakdown voltage v (br)gss 2.5 ? ? v i g = 100 a, v ds = 0 i gss1 ? ? ?100 a v gs = ?8 v, v ds = 0 i gss2 ? ? ?50 a v gs = ?3.5 v, v ds = 0 i gss3 ? ? ?1 a v gs = ?1.2 v, v ds = 0 gate to source leak current i gss4 ? ? 100 a v gs = 2.4 v, v ds = 0 i gs(op)1 ? ?0.8 ? ma v gs = ?8 v, v ds = 0 input current (shut down) i gs(op)2 ? ?0.35 ? ma v gs = ?3.5 v, v ds = 0 zero gate voltage drain current i dss ? ? ?10 a v ds = ?60 v, v gs = 0 gate to source cutoff voltage v gs(off) ?1.1 ? ?2.15 v v ds = ?10 v, i d = ?1 ma forward transfer admittance |y fs | 8.4 14.8 ? s i d = ?20 a, v ds = ?10 v note3 static drain to source on state r ds(on) ?3350m ? i d = ?20 a, v gs = ?4 v note3 resistance r ds(on) ?2027m ? i d = ?20 a, v gs = ?10 v note3 output capacitance coss ? 1500 ? pf v ds = ?10 v, v gs = 0, f = 1 mhz turn-on delay time td(on) ? 10.6 ? s rise time tr ? 45 ? s turn-off delay time td(off) ? 12 ? s fall time tf ? 13 ? s v gs = -10 v, i d = ?20 a, r l = 1.5 ? body?drain diode forward voltage v df ? ?0.95 ? v i f = ?40 a, v gs = 0 body?drain diode reverse recovery time trr ? 100 ? ns i f = ?40 a, v gs = 0 dif/dt = 50 a/s over load shut down t os1 ?4.1?msv gs = ?5 v, v dd = ?16 v operation time note4 t os2 ?1.5?msv gs = ?5 v, v dd = ?24 v notes: 3. pulse test 4. including the junction temperature ri se of the over loaded condition.
haf1009(l), haf1009(s) rev.1.00, may.13.2 003, page 4 of 10 main characteristics -100 -200 -500 -20 -50 -10 -2 -5 -1 -0.5 -0.3 -0.5 -1 -2 -5 -10 -20 -50 -10 0 drain to source voltage v ds (v) drain current i d (a) maximum safe operation area -50 -40 -30 -20 -10 0 -2 -4 -6 -8 -10 -10 v v = -3.5 v gs drain to source voltage v ds (v) drain current i d (a) typical output characteristics 0 -2 -4 -6 -8 -10 tc = -25 c 75 c tc = -25 c 25 c 75 c gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics 100 s 1 ms pw = 10 m s dc operation (tc = 25 c) ta = 25 c -50 -40 -30 -20 -10 -8 v -6 v -5 v -4 v pulse test v = -10 v ds pulse test 80 60 40 20 0 50 100 150 200 channel dissipation pch (w) case temperature tc ( c) power vs. temperature derating 25 c thermal shut down operation area operation in this area is limited by r ds(on)
haf1009(l), haf1009(s) rev.1.00, may.13.2 003, page 5 of 10 -1.6 -2.0 -1.2 -0.8 -0.4 0 -2 -4 -6 -8 -10 pulse test gate to source voltage v gs (v) drain to source saturation voltage vs. gate to source voltage drain to source saturation voltage v ds(on) (v) 50 100 -0.1 -0.5 -1 -5 -10 -50 -100 20 10 2 5 1 drain current i d (a) static drain to source sate resistance vs. drain current 100 80 60 40 20 -25 0 25 50 75 100 125 150 0 pulse test case temperature tc ( c) drain to source on state resistance r ds(on) (m ? ) drain to source on state resistance r ds(on) (m ? ) static drain to source on state resistance vs. temperature 100 20 10 50 drain current i d (a) forward transfer admittance vs. drain current forward transfer admittance |yfs| (s) -20 a i = -40 a d -10 a v = -10 v gs v = -4 v gs -10 a i = -40 a d -20 a -10 a -20 a -40 a -0.1 -1 -10 -100 5 2 1 0.1 0.2 0.5 tc = -25 c 25 c 75 c ds v = -10 v pulse test v = -4 v gs -10 v pulse test
haf1009(l), haf1009(s) rev.1.00, may.13.2 003, page 6 of 10 reverse drain current i dr (a) reverse recovery time trr (ns) body to drain diode reverse recovery time drain current i d (a) switching time t ( s) switching characteristics -50 -40 -30 -20 -10 0 -0.4 -0.8 -1.2 -1.6 -2.0 gs v = 0 v -5 v -10 v source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage pulse test 10000 1000 100 0 -10 -20 -30 -40 -60 -50 capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage 500 -0.1 -0.5 -1 -5 -50 -10 -100 200 100 1000 20 50 10 di / dt = 50 a / s v = 0, ta = 25 c gs 50 -0.1 -0.2 -0.5 -1 -2 -20 -5 -50 -10 -100 20 10 5 2 1 500 200 100 1000 r t v = -10 v, v = -30 v pw = 300 s, duty < 1 % gs dd t f d(off) t v = 0 f = 1 mhz gs d(on) t
haf1009(l), haf1009(s) rev.1.00, may.13.2 003, page 7 of 10 -2 -4 -12 -10 -8 -6 0 gate to source voltage v gs (v) gate to source voltage vs. shutdown time of load-short test 0.1 shutdown time of load-short test pw (s) 0.0001 0.001 0.01 -24v v dd = -16 v 200 180 160 140 120 -0 gate to source voltage v gs (v) shutdown case temperature tc ( c) 100 -2 -4 -6 -8 -10 i d = -5 a shutdown case temperature vs. gate to source voltage 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 dm p pw t d = pw t ch - c(t) = s (t) ? ch - c ch - c = 2.5 c/w, tc = 25 c tc = 25 c d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot p ulse pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width
haf1009(l), haf1009(s) rev.1.00, may.13.2 003, page 8 of 10 package dimensions package code jedec jeita mass (reference value) ldpak (l) ? ? 1.40 g 10.2 0.3 0.86 0.76 0.1 2.54 0.5 2.54 0.5 + 0.2 ? 0.1 1.3 0.2 4.44 0.2 1.3 0.15 2.49 0.2 0.4 0.1 11.0 0.5 8.6 0.3 10.0 11.3 0.5 + 0.3 ? 0.5 (1.4) 1.37 0.2 as of january, 2003 unit: mm
haf1009(l), haf1009(s) rev.1.00, may.13.2 003, page 9 of 10 package code jedec jeita mass (reference value) ldpak (s)-(1) ? ? 1.30 g 10.2 0.3 1.37 0.2 (1.5) (1.4) 8.6 0.3 10.0 + 0.3 ? 0.5 4.44 0.2 1.3 0.15 0.1 + 0.2 ? 0.1 0.4 0.1 2.49 0.2 0.86 + 0.2 ? 0.1 2.54 0.5 2.54 0.5 1.3 0.2 3.0 + 0.3 ? 0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 as of january, 2003 unit: mm
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